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BSO211PNTMA1 Datasheet

BSO211PNTMA1 Cover
DatasheetBSO211PNTMA1
File Size81.22 KB
Total Pages8
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts BSO211PNTMA1
Description MOSFET 2P-CH 20V 4.7A 8SOIC

BSO211PNTMA1 - Infineon Technologies

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URL Link

BSO211PNTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.7A

Rds On (Max) @ Id, Vgs

67mOhm @ 4.7A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

23.9nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

920pF @ 15V

Power - Max

2W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

P-DSO-8