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| Datasheet | BSM120D12P2C005 |
| File Size | 633.26 KB |
| Total Pages | 9 |
| Manufacturer | Rohm Semiconductor |
| Website | https://www.rohm.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | BSM120D12P2C005 |
| Description | MOSFET 2N-CH 1200V 120A MODULE |
BSM120D12P2C005 - Rohm Semiconductor
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URL Link
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Manufacturer Rohm Semiconductor Series - FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 120A (Tc) Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id 2.7V @ 22mA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 10V Power - Max 780W Operating Temperature -40°C ~ 150°C (TJ) Mounting Type - Package / Case Module Supplier Device Package Module |