Top

BSC152N10NSFGATMA1 Datasheet

BSC152N10NSFGATMA1 Cover
DatasheetBSC152N10NSFGATMA1
File Size665.87 KB
Total Pages10
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts BSC152N10NSFGATMA1
Description MOSFET N-CH 100V 63A TDSON-8

BSC152N10NSFGATMA1 - Infineon Technologies

BSC152N10NSFGATMA1 Datasheet Page 1
BSC152N10NSFGATMA1 Datasheet Page 2
BSC152N10NSFGATMA1 Datasheet Page 3
BSC152N10NSFGATMA1 Datasheet Page 4
BSC152N10NSFGATMA1 Datasheet Page 5
BSC152N10NSFGATMA1 Datasheet Page 6
BSC152N10NSFGATMA1 Datasheet Page 7
BSC152N10NSFGATMA1 Datasheet Page 8
BSC152N10NSFGATMA1 Datasheet Page 9
BSC152N10NSFGATMA1 Datasheet Page 10

The Products You May Be Interested In

BSC152N10NSFGATMA1 BSC152N10NSFGATMA1 Infineon Technologies MOSFET N-CH 100V 63A TDSON-8 270

More on Order

URL Link

BSC152N10NSFGATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

9.4A (Ta), 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

15.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 72µA

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 50V

FET Feature

-

Power Dissipation (Max)

114W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TDSON-8-1

Package / Case

8-PowerTDFN