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BS7067N06LS3G Datasheet

BS7067N06LS3G Cover
DatasheetBS7067N06LS3G
File Size483.96 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts BS7067N06LS3G
Description MOSFET N-CH 60V 20A TSDSON-8

BS7067N06LS3G - Infineon Technologies

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URL Link

BS7067N06LS3G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

14A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.2V @ 35µA

Gate Charge (Qg) (Max) @ Vgs

62nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4800pF @ 30V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta), 78W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSDSON-8

Package / Case

8-PowerVDFN