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BS108/01 Datasheet

BS108/01,126 Cover
DatasheetBS108/01,126
File Size54.32 KB
Total Pages8
ManufacturerNXP
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts BS108/01,126, BS108,126
Description MOSFET N-CH 200V 300MA SOT54, MOSFET N-CH 200V 300MA SOT54

BS108/01,126 - NXP

BS108/01 Datasheet Page 1
BS108/01 Datasheet Page 2
BS108/01 Datasheet Page 3
BS108/01 Datasheet Page 4
BS108/01 Datasheet Page 5
BS108/01 Datasheet Page 6
BS108/01 Datasheet Page 7
BS108/01 Datasheet Page 8

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BS108/01,126 BS108/01,126 NXP MOSFET N-CH 200V 300MA SOT54 557

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URL Link

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.8V

Rds On (Max) @ Id, Vgs

5Ohm @ 100mA, 2.8V

Vgs(th) (Max) @ Id

1.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

BS108,126

NXP

Manufacturer

NXP USA Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.8V

Rds On (Max) @ Id, Vgs

5Ohm @ 100mA, 2.8V

Vgs(th) (Max) @ Id

1.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)