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BFL4007-1E Datasheet

BFL4007-1E Cover
DatasheetBFL4007-1E
File Size250.73 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts BFL4007-1E, BFL4007
Description MOSFET N-CH 600V 8.7A, MOSFET N-CH 600V 8.7A TO-220FI

BFL4007-1E - ON Semiconductor

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URL Link

BFL4007-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

680mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F-3FS

Package / Case

TO-220-3 Full Pack

BFL4007

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

8.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

680mOhm @ 7A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

46nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 40W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FI(LS)

Package / Case

TO-220-3 Full Pack