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BCR35PNE6433HTMA1 Datasheet

BCR35PNE6433HTMA1 Cover
DatasheetBCR35PNE6433HTMA1
File Size528.33 KB
Total Pages7
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 4 part numbers
Associated Parts BCR35PNE6433HTMA1, BCR35PNE6327BTSA1, BCR35PNH6433XTMA1, BCR35PNH6327XTSA1
Description TRANS NPN/PNP PREBIAS SOT363, TRANS NPN/PNP PREBIAS SOT363, TRANS NPN/PNP PREBIAS SOT363, TRANS NPN/PNP PREBIAS SOT363

BCR35PNE6433HTMA1 - Infineon Technologies

BCR35PNE6433HTMA1 Datasheet Page 1
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URL Link

BCR35PNE6433HTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6

BCR35PNE6327BTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6

BCR35PNH6433XTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6

BCR35PNH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

10kOhms

Resistor - Emitter Base (R2)

47kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

-

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-VSSOP, SC-88, SOT-363

Supplier Device Package

PG-SOT363-6