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BCR112WE6327BTSA1 Datasheet

BCR112WE6327BTSA1 Cover
DatasheetBCR112WE6327BTSA1
File Size836.33 KB
Total Pages8
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 4 part numbers
Associated Parts BCR112WE6327BTSA1, BCR 112F E6327, BCR112WH6327XTSA1, BCR112E6327HTSA1
Description TRANS PREBIAS NPN 250MW SOT323-3, TRANS PREBIAS NPN 250MW TSFP-3, TRANS PREBIAS NPN 250MW SOT323-3, TRANS PREBIAS NPN 0.2W SOT23-3

BCR112WE6327BTSA1 - Infineon Technologies

BCR112WE6327BTSA1 Datasheet Page 1
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URL Link

BCR112WE6327BTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

140MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

PG-SOT323-3

BCR 112F E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

140MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SOT-723

Supplier Device Package

PG-TSFP-3

BCR112WH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

140MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Supplier Device Package

PG-SOT323-3

BCR112E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7 kOhms

Resistor - Emitter Base (R2)

4.7 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

20 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

140MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SOT-23-3