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BCP5616E6327HTSA1 Datasheet

BCP5616E6327HTSA1 Cover
DatasheetBCP5616E6327HTSA1
File Size821.95 KB
Total Pages7
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 10 part numbers
Associated Parts BCP5616E6327HTSA1, BCP 55-16 E6327, BCP5416E6433HTMA1, BCP 54-16 H6779, BCP 54-16 H6778, BCP 54-16 E6327, BCP 56-10 E6433, BCP5610E6327HTSA1, BCP55E6327HTSA1, BCP54E6327HTSA1
Description TRANS NPN 80V 1A SOT-223, TRANS NPN 60V 1A SOT-223, TRANS NPN 45V 1A SOT-223, TRANS NPN 45V 1A SOT223, TRANS NPN 45V 1A SOT223

BCP5616E6327HTSA1 - Infineon Technologies

BCP5616E6327HTSA1 Datasheet Page 1
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URL Link

BCP5616E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 150mA, 2V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

PG-SOT223-4

BCP 55-16 E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 150mA, 2V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

PG-SOT223-4

BCP5416E6433HTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 150mA, 2V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

PG-SOT223-4

BCP 54-16 H6779

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 150mA, 2V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

PG-SOT223-4

BCP 54-16 H6778

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 150mA, 2V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

PG-SOT223-4

BCP 54-16 E6327

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 150mA, 2V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

PG-SOT223-4

BCP 56-10 E6433

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

63 @ 150mA, 2V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

PG-SOT223-4

BCP5610E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

63 @ 150mA, 2V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

PG-SOT223-4

BCP55E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 150mA, 2V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

PG-SOT223-4

BCP54E6327HTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 150mA, 2V

Power - Max

2W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

PG-SOT223-4