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BC639 Datasheet

BC639,112 Cover
DatasheetBC639,112
File Size153.66 KB
Total Pages15
ManufacturerNXP
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts BC639,112, BC639,116, BC639,126
Description TRANS NPN 80V 1A TO-92, TRANS NPN 80V 1A TO-92, TRANS NPN 80V 1A TO-92

BC639,112 - NXP

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BC639,112 BC639,112 NXP TRANS NPN 80V 1A TO-92 227

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BC639,116 BC639,116 NXP TRANS NPN 80V 1A TO-92 417

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BC639,126 BC639,126 NXP TRANS NPN 80V 1A TO-92 378

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URL Link

BC639,112

NXP

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

63 @ 150mA, 2V

Power - Max

830mW

Frequency - Transition

180MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

BC639,116

NXP

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

63 @ 150mA, 2V

Power - Max

830mW

Frequency - Transition

180MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC639,126

NXP

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

63 @ 150mA, 2V

Power - Max

830mW

Frequency - Transition

180MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3