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BC639 Datasheet

BC639 Cover
DatasheetBC639
File Size57.15 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 9 part numbers
Associated Parts BC639, BC637, BC639ZL1, BC639RL1, BC639-16ZL1, BC635ZL1G, BC635ZL1, BC635RL1G, BC635RL1
Description TRANS NPN 80V 1A TO-92, TRANS NPN 60V 1A TO-92, TRANS NPN 80V 1A TO-92, TRANS NPN 80V 1A TO-92, TRANS NPN 80V 1A TO-92

BC639 - ON Semiconductor

BC639 Datasheet Page 1
BC639 Datasheet Page 2
BC639 Datasheet Page 3
BC639 Datasheet Page 4
BC639 Datasheet Page 5

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URL Link

BC639

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 150mA, 2V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

BC637

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 150mA, 2V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

BC639ZL1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 150mA, 2V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC639RL1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 150mA, 2V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC639-16ZL1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

80V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 150mA, 2V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC635ZL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 150mA, 2V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC635ZL1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 150mA, 2V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC635RL1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 150mA, 2V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

BC635RL1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

1A

Voltage - Collector Emitter Breakdown (Max)

45V

Vce Saturation (Max) @ Ib, Ic

500mV @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 150mA, 2V

Power - Max

625mW

Frequency - Transition

200MHz

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3