Top

BAW76-TAP Datasheet

BAW76-TAP Cover
DatasheetBAW76-TAP
File Size73.83 KB
Total Pages3
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts BAW76-TAP, BAW76-TR
Description DIODE GEN PURP 50V 300MA DO35, DIODE GEN PURP 50V 300MA DO35

BAW76-TAP - Vishay Semiconductor Diodes Division

BAW76-TAP Datasheet Page 1
BAW76-TAP Datasheet Page 2
BAW76-TAP Datasheet Page 3

The Products You May Be Interested In

BAW76-TAP BAW76-TAP Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 300MA DO35 52926

More on Order

BAW76-TR BAW76-TR Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 300MA DO35 96771

More on Order

URL Link

BAW76-TAP

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

300mA (DC)

Voltage - Forward (Vf) (Max) @ If

1V @ 100mA

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

4ns

Current - Reverse Leakage @ Vr

100nA @ 50V

Capacitance @ Vr, F

2pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

DO-204AH, DO-35, Axial

Supplier Device Package

DO-35

Operating Temperature - Junction

175°C (Max)

BAW76-TR

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

50V

Current - Average Rectified (Io)

300mA (DC)

Voltage - Forward (Vf) (Max) @ If

1V @ 100mA

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

4ns

Current - Reverse Leakage @ Vr

100nA @ 50V

Capacitance @ Vr, F

2pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

DO-204AH, DO-35, Axial

Supplier Device Package

DO-35

Operating Temperature - Junction

175°C (Max)