Top

AUIRLR3636 Datasheet

AUIRLR3636 Cover
DatasheetAUIRLR3636
File Size636.32 KB
Total Pages10
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts AUIRLR3636
Description MOSFET N-CH 60V 99A DPAK

AUIRLR3636 - Infineon Technologies

AUIRLR3636 Datasheet Page 1
AUIRLR3636 Datasheet Page 2
AUIRLR3636 Datasheet Page 3
AUIRLR3636 Datasheet Page 4
AUIRLR3636 Datasheet Page 5
AUIRLR3636 Datasheet Page 6
AUIRLR3636 Datasheet Page 7
AUIRLR3636 Datasheet Page 8
AUIRLR3636 Datasheet Page 9
AUIRLR3636 Datasheet Page 10

The Products You May Be Interested In

AUIRLR3636 AUIRLR3636 Infineon Technologies MOSFET N-CH 60V 99A DPAK 525

More on Order

URL Link

AUIRLR3636

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.8mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

49nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

3779pF @ 50V

FET Feature

-

Power Dissipation (Max)

143W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63