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ATP216-TL-H Datasheet

ATP216-TL-H Cover
DatasheetATP216-TL-H
File Size376.79 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts ATP216-TL-H
Description MOSFET N-CH 50V 35A ATPAK

ATP216-TL-H - ON Semiconductor

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URL Link

ATP216-TL-H

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

50V

Current - Continuous Drain (Id) @ 25°C

35A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

23mOhm @ 18A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

30nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 20V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

ATPAK

Package / Case

ATPAK (2 leads+tab)