Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | AS4PMHM3/87A |
| File Size | 93.51 KB |
| Total Pages | 5 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 30 part numbers |
| Associated Parts | AS4PMHM3/87A, AS4PMHM3/86A, AS4PKHM3/87A, AS4PKHM3/86A, AS4PJHM3/87A, AS4PJHM3/86A, AS4PGHM3/87A, AS4PGHM3/86A, AS4PDHM3/87A, AS4PDHM3/86A, AS4PMHM3_A/I, AS4PMHM3_A/H, AS4PKHM3_A/I, AS4PKHM3_A/H, AS4PJHM3_A/I, AS4PJHM3_A/H, AS4PGHM3_A/I, AS4PGHM3_A/H, AS4PDHM3_A/I, AS4PDHM3_A/H, AS4PK-M3/86A, AS4PG-M3/86A, AS4PM-M3/87A, AS4PK-M3/87A, AS4PJ-M3/87A, AS4PG-M3/87A, AS4PD-M3/87A, AS4PD-M3/86A, AS4PM-M3/86A, AS4PJ-M3/86A |
| Description | DIODE AVALANCHE 1KV 2.4A TO277, DIODE AVALANCHE 1KV 2.4A TO277, DIODE AVALANCHE 800V 2.4A TO277A, DIODE AVALANCHE 800V 2.4A TO277A, DIODE AVALANCHE 600V 2.4A TO277A |
AS4PMHM3/87A - Vishay Semiconductor Diodes Division
The Products You May Be Interested In
 |
AS4PMHM3/87A | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 1KV 2.4A TO277 | 555 More on Order |
 |
AS4PMHM3/86A | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 1KV 2.4A TO277 | 562 More on Order |
 |
AS4PKHM3/87A | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 800V 2.4A TO277A | 464 More on Order |
 |
AS4PKHM3/86A | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 800V 2.4A TO277A | 252 More on Order |
 |
AS4PJHM3/87A | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 600V 2.4A TO277A | 682 More on Order |
 |
AS4PJHM3/86A | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 600V 2.4A TO277A | 357 More on Order |
 |
AS4PGHM3/87A | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 400V 2.4A TO277A | 458 More on Order |
 |
AS4PGHM3/86A | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 400V 2.4A TO277A | 403 More on Order |
 |
AS4PDHM3/87A | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 2.4A TO277A | 405 More on Order |
 |
AS4PDHM3/86A | Vishay Semiconductor Diodes Division | DIODE AVALANCHE 200V 2.4A TO277A | 211 More on Order |
 |
AS4PMHM3_A/I | Vishay Semiconductor Diodes Division | DIODE AVALANCH 1KV 2.4A TO277A | 424 More on Order |
 |
AS4PMHM3_A/H | Vishay Semiconductor Diodes Division | DIODE AVALANCH 1KV 2.4A TO277A | 565 More on Order |
URL Link
|
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 2.4A (DC) Voltage - Forward (Vf) (Max) @ If 962mV @ 2A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 2.4A (DC) Voltage - Forward (Vf) (Max) @ If 962mV @ 2A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 2.4A (DC) Voltage - Forward (Vf) (Max) @ If 962mV @ 2A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 2.4A (DC) Voltage - Forward (Vf) (Max) @ If 962mV @ 2A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 800V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 2.4A (DC) Voltage - Forward (Vf) (Max) @ If 962mV @ 2A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 2.4A (DC) Voltage - Forward (Vf) (Max) @ If 962mV @ 2A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 2.4A (DC) Voltage - Forward (Vf) (Max) @ If 962mV @ 2A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) 2.4A (DC) Voltage - Forward (Vf) (Max) @ If 962mV @ 2A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 400V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 2.4A (DC) Voltage - Forward (Vf) (Max) @ If 962mV @ 2A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 2.4A (DC) Voltage - Forward (Vf) (Max) @ If 962mV @ 2A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 200V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 2.4A Voltage - Forward (Vf) (Max) @ If 1.1V @ 4A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101, eSMP® Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 1000V Current - Average Rectified (Io) 2.4A Voltage - Forward (Vf) (Max) @ If 1.1V @ 4A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 1.8µs Current - Reverse Leakage @ Vr 10µA @ 1000V Capacitance @ Vr, F 60pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C |