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AR4PMHM3/87A Datasheet

AR4PMHM3/87A Cover
DatasheetAR4PMHM3/87A
File Size90.86 KB
Total Pages5
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 12 part numbers
Associated Parts AR4PMHM3/87A, AR4PMHM3/86A, AR4PKHM3/87A, AR4PKHM3/86A, AR4PMHM3_A/H, AR4PKHM3_A/I, AR4PKHM3_A/H, AR4PMHM3_A/I, AR4PK-M3/86A, AR4PM-M3/86A, AR4PM-M3/87A, AR4PK-M3/87A
Description DIODE AVALANCHE 1KV 1.8A TO277, DIODE AVALANCHE 1KV 1.8A TO277, DIODE AVALANCHE 800V 1.8A TO277A, DIODE AVALANCHE 800V 1.8A TO277A, DIODE AVALANCH 1KV 1.8A TO277A

AR4PMHM3/87A - Vishay Semiconductor Diodes Division

AR4PMHM3/87A Datasheet Page 1
AR4PMHM3/87A Datasheet Page 2
AR4PMHM3/87A Datasheet Page 3
AR4PMHM3/87A Datasheet Page 4
AR4PMHM3/87A Datasheet Page 5

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URL Link

AR4PMHM3/87A

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

eSMP®

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

1.8A (DC)

Voltage - Forward (Vf) (Max) @ If

1.9V @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

120ns

Current - Reverse Leakage @ Vr

10µA @ 1000V

Capacitance @ Vr, F

55pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

Supplier Device Package

TO-277A (SMPC)

Operating Temperature - Junction

-55°C ~ 175°C

AR4PMHM3/86A

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

eSMP®

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

1.8A (DC)

Voltage - Forward (Vf) (Max) @ If

1.9V @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

120ns

Current - Reverse Leakage @ Vr

10µA @ 1000V

Capacitance @ Vr, F

55pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

Supplier Device Package

TO-277A (SMPC)

Operating Temperature - Junction

-55°C ~ 175°C

AR4PKHM3/87A

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

eSMP®

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

1.8A (DC)

Voltage - Forward (Vf) (Max) @ If

1.9V @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

120ns

Current - Reverse Leakage @ Vr

10µA @ 800V

Capacitance @ Vr, F

55pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

Supplier Device Package

TO-277A (SMPC)

Operating Temperature - Junction

-55°C ~ 175°C

AR4PKHM3/86A

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

eSMP®

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

1.8A (DC)

Voltage - Forward (Vf) (Max) @ If

1.9V @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

120ns

Current - Reverse Leakage @ Vr

10µA @ 800V

Capacitance @ Vr, F

55pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

Supplier Device Package

TO-277A (SMPC)

Operating Temperature - Junction

-55°C ~ 175°C

AR4PMHM3_A/H

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101, eSMP®

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

1.8A

Voltage - Forward (Vf) (Max) @ If

1.9V @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

120ns

Current - Reverse Leakage @ Vr

10µA @ 1000V

Capacitance @ Vr, F

55pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

Supplier Device Package

TO-277A (SMPC)

Operating Temperature - Junction

-55°C ~ 175°C

AR4PKHM3_A/I

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101, eSMP®

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

1.8A

Voltage - Forward (Vf) (Max) @ If

1.9V @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

120ns

Current - Reverse Leakage @ Vr

10µA @ 800V

Capacitance @ Vr, F

55pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

Supplier Device Package

TO-277A (SMPC)

Operating Temperature - Junction

-55°C ~ 175°C

AR4PKHM3_A/H

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101, eSMP®

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

1.8A

Voltage - Forward (Vf) (Max) @ If

1.9V @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

120ns

Current - Reverse Leakage @ Vr

10µA @ 800V

Capacitance @ Vr, F

55pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

Supplier Device Package

TO-277A (SMPC)

Operating Temperature - Junction

-55°C ~ 175°C

AR4PMHM3_A/I

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101, eSMP®

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

1.8A

Voltage - Forward (Vf) (Max) @ If

1.9V @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

120ns

Current - Reverse Leakage @ Vr

10µA @ 1000V

Capacitance @ Vr, F

55pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

Supplier Device Package

TO-277A (SMPC)

Operating Temperature - Junction

-55°C ~ 175°C

AR4PK-M3/86A

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

eSMP®

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

1.8A (DC)

Voltage - Forward (Vf) (Max) @ If

1.9V @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

120ns

Current - Reverse Leakage @ Vr

10µA @ 800V

Capacitance @ Vr, F

55pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

Supplier Device Package

TO-277A (SMPC)

Operating Temperature - Junction

-55°C ~ 175°C

AR4PM-M3/86A

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

eSMP®

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

1.8A (DC)

Voltage - Forward (Vf) (Max) @ If

1.9V @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

120ns

Current - Reverse Leakage @ Vr

10µA @ 1000V

Capacitance @ Vr, F

55pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

Supplier Device Package

TO-277A (SMPC)

Operating Temperature - Junction

-55°C ~ 175°C

AR4PM-M3/87A

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

eSMP®

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

1.8A (DC)

Voltage - Forward (Vf) (Max) @ If

1.9V @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

120ns

Current - Reverse Leakage @ Vr

10µA @ 1000V

Capacitance @ Vr, F

55pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

Supplier Device Package

TO-277A (SMPC)

Operating Temperature - Junction

-55°C ~ 175°C

AR4PK-M3/87A

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

eSMP®

Diode Type

Avalanche

Voltage - DC Reverse (Vr) (Max)

800V

Current - Average Rectified (Io)

1.8A (DC)

Voltage - Forward (Vf) (Max) @ If

1.9V @ 4A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

120ns

Current - Reverse Leakage @ Vr

10µA @ 800V

Capacitance @ Vr, F

55pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-277, 3-PowerDFN

Supplier Device Package

TO-277A (SMPC)

Operating Temperature - Junction

-55°C ~ 175°C