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APTM60H23FT1G Datasheet

APTM60H23FT1G Cover
DatasheetAPTM60H23FT1G
File Size141.99 KB
Total Pages5
ManufacturerMicrosemi
Websitehttps://www.microsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts APTM60H23FT1G
Description MOSFET 4N-CH 600V 20A SP1

APTM60H23FT1G - Microsemi

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URL Link

APTM60H23FT1G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

4 N-Channel (H-Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A

Rds On (Max) @ Id, Vgs

276mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

165nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

5316pF @ 25V

Power - Max

208W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP1

Supplier Device Package

SP1