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APTM20DHM10G Datasheet

APTM20DHM10G Cover
DatasheetAPTM20DHM10G
File Size279.2 KB
Total Pages6
ManufacturerMicrosemi
Websitehttps://www.microsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts APTM20DHM10G
Description MOSFET 2N-CH 200V 175A SP6

APTM20DHM10G - Microsemi

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URL Link

APTM20DHM10G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

2 N-Channel (Dual) Asymmetrical

FET Feature

Standard

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

175A

Rds On (Max) @ Id, Vgs

12mOhm @ 87.5A, 10V

Vgs(th) (Max) @ Id

5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

224nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

13700pF @ 25V

Power - Max

694W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP6

Supplier Device Package

SP6