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APTM120DA29TG Datasheet

APTM120DA29TG Cover
DatasheetAPTM120DA29TG
File Size283.33 KB
Total Pages6
ManufacturerMicrosemi
Websitehttps://www.microsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts APTM120DA29TG
Description MOSFET N-CH 1200V 34A SP4

APTM120DA29TG - Microsemi

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URL Link

APTM120DA29TG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

348mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

5V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

374nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

10300pF @ 25V

FET Feature

-

Power Dissipation (Max)

780W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP4

Package / Case

SP4