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APTM100U13SG Datasheet

APTM100U13SG Cover
DatasheetAPTM100U13SG
File Size285.88 KB
Total Pages5
ManufacturerMicrosemi
Websitehttps://www.microsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts APTM100U13SG
Description MOSFET N-CH 1000V 65A J3

APTM100U13SG - Microsemi

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URL Link

APTM100U13SG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

65A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

145mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id

4V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

2000nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

31600pF @ 25V

FET Feature

-

Power Dissipation (Max)

1250W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

Module

Package / Case

J3 Module