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APTM100A12STG Datasheet

APTM100A12STG Cover
DatasheetAPTM100A12STG
File Size314.77 KB
Total Pages6
ManufacturerMicrosemi
Websitehttps://www.microsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts APTM100A12STG
Description MOSFET 2N-CH 1000V 68A LP8W

APTM100A12STG - Microsemi

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URL Link

APTM100A12STG

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

2 N-Channel (Half Bridge)

FET Feature

Standard

Drain to Source Voltage (Vdss)

1000V (1kV)

Current - Continuous Drain (Id) @ 25°C

68A

Rds On (Max) @ Id, Vgs

120mOhm @ 34A, 10V

Vgs(th) (Max) @ Id

5V @ 10mA

Gate Charge (Qg) (Max) @ Vgs

616nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

17400pF @ 25V

Power - Max

1250W

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Package / Case

SP3

Supplier Device Package

SP3