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APT6040BNG Datasheet

APT6040BNG Cover
DatasheetAPT6040BNG
File Size50.61 KB
Total Pages4
ManufacturerMicrosemi
Websitehttps://www.microsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts APT6040BNG, APT6040BN
Description MOSFET N-CH 600V 18A TO247AD, MOSFET N-CH 600V 18A TO247AD

APT6040BNG - Microsemi

APT6040BNG Datasheet Page 1
APT6040BNG Datasheet Page 2
APT6040BNG Datasheet Page 3
APT6040BNG Datasheet Page 4

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URL Link

APT6040BNG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS IV®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2950pF @ 25V

FET Feature

-

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD

Package / Case

TO-247-3

APT6040BN

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS IV®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2950pF @ 25V

FET Feature

-

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD

Package / Case

TO-247-3