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APT1003RBLLG Datasheet

APT1003RBLLG Cover
DatasheetAPT1003RBLLG
File Size330 KB
Total Pages5
ManufacturerMicrosemi
Websitehttps://www.microsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts APT1003RBLLG
Description MOSFET N-CH 1000V 4A TO-247

APT1003RBLLG - Microsemi

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URL Link

APT1003RBLLG

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 7®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

694pF @ 25V

FET Feature

-

Power Dissipation (Max)

139W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 [B]

Package / Case

TO-247-3