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AO6409_DELTA Datasheet

AO6409_DELTA Cover
DatasheetAO6409_DELTA
File Size330.66 KB
Total Pages5
ManufacturerAlpha & Omega Semiconductor
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts AO6409_DELTA, AO6409_102, AO6409
Description MOSFET P-CH 20V 6TSOT, MOSFET P-CH 20V 5.5A 6TSOP, MOSFET P-CH 20V 5.5A 6TSOP

AO6409_DELTA - Alpha & Omega Semiconductor

AO6409_DELTA Datasheet Page 1
AO6409_DELTA Datasheet Page 2
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AO6409_DELTA Datasheet Page 4
AO6409_DELTA Datasheet Page 5

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AO6409_DELTA AO6409_DELTA Alpha & Omega Semiconductor MOSFET P-CH 20V 6TSOT 330

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AO6409_102 AO6409_102 Alpha & Omega Semiconductor MOSFET P-CH 20V 5.5A 6TSOP 217

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AO6409 AO6409 Alpha & Omega Semiconductor MOSFET P-CH 20V 5.5A 6TSOP 4462

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URL Link

AO6409_DELTA

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

AO6409_102

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

45mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17.2nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1450pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SC-74, SOT-457

AO6409

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

45mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17.2nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1450pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.1W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SC-74, SOT-457