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ALD212908APAL Datasheet

ALD212908APAL Cover
DatasheetALD212908APAL
File Size111.34 KB
Total Pages12
ManufacturerAdvanced Linear Devices Inc.
Website
Total PartsThis datasheet covers 4 part numbers
Associated Parts ALD212908APAL, ALD212908ASAL, ALD212908SAL, ALD212908PAL
Description MOSFET 2N-CH 10.6V 0.08A 8DIP, MOSFET 2N-CH 10.6V 0.08A 8SOIC, MOSFET 2N-CH 10.6V 0.08A 8SOIC, MOSFET 2N-CH 10.6V 0.08A 8DIP

ALD212908APAL - Advanced Linear Devices Inc.

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ALD212908ASAL ALD212908ASAL Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 0.08A 8SOIC 572

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ALD212908SAL ALD212908SAL Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 0.08A 8SOIC 513

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ALD212908PAL ALD212908PAL Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 0.08A 8DIP 463

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URL Link

ALD212908APAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®, Zero Threshold™

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

80mA

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

20mV @ 10µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Through Hole

Package / Case

8-DIP (0.300", 7.62mm)

Supplier Device Package

8-PDIP

ALD212908ASAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®, Zero Threshold™

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

80mA

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

20mV @ 10µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

ALD212908SAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®, Zero Threshold™

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

80mA

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

20mV @ 10µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SOIC

ALD212908PAL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®, Zero Threshold™

FET Type

2 N-Channel (Dual) Matched Pair

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

80mA

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

20mV @ 10µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Through Hole

Package / Case

8-DIP (0.300", 7.62mm)

Supplier Device Package

8-PDIP