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| Datasheet | ALD212900ASAL |
| File Size | 515.01 KB |
| Total Pages | 12 |
| Manufacturer | Advanced Linear Devices Inc. |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | ALD212900ASAL, ALD212900SAL, ALD212900APAL, ALD212900PAL |
| Description | MOSFET 2N-CH 10.6V 0.08A 8SOIC, MOSFET 2N-CH 10.6V 0.08A 8SOIC, MOSFET 2N-CH 10.6V 0.08A 8DIP, MOSFET 2N-CH 10.6V 0.08A 8DIP |
ALD212900ASAL - Advanced Linear Devices Inc.
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Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 2 N-Channel (Dual) Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs 14Ohm Vgs(th) (Max) @ Id 10mV @ 20µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 30pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 2 N-Channel (Dual) Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs 14Ohm Vgs(th) (Max) @ Id 20mV @ 20µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 30pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |
Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 2 N-Channel (Dual) Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs 14Ohm Vgs(th) (Max) @ Id 10mV @ 20µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 30pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |
Manufacturer Advanced Linear Devices Inc. Series EPAD®, Zero Threshold™ FET Type 2 N-Channel (Dual) Matched Pair FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 80mA Rds On (Max) @ Id, Vgs 14Ohm Vgs(th) (Max) @ Id 20mV @ 20µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 30pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 8-DIP (0.300", 7.62mm) Supplier Device Package 8-PDIP |