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ALD210808ASCL Datasheet

ALD210808ASCL Cover
DatasheetALD210808ASCL
File Size113.6 KB
Total Pages12
ManufacturerAdvanced Linear Devices Inc.
Website
Total PartsThis datasheet covers 4 part numbers
Associated Parts ALD210808ASCL, ALD210808APCL, ALD210808PCL, ALD210808SCL
Description MOSFET 4N-CH 10.6V 0.08A 16SOIC, MOSFET 4N-CH 10.6V 0.08A 16DIP, MOSFET 4N-CH 10.6V 0.08A 16DIP, MOSFET 4N-CH 10.6V 0.08A 16SOIC

ALD210808ASCL - Advanced Linear Devices Inc.

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ALD210808APCL ALD210808APCL Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 0.08A 16DIP 417

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ALD210808PCL ALD210808PCL Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 0.08A 16DIP 582

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ALD210808SCL ALD210808SCL Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 0.08A 16SOIC 214

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URL Link

ALD210808ASCL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®, Zero Threshold™

FET Type

4 N-Channel, Matched Pair

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

80mA

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

20mV @ 10µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package

16-SOIC

ALD210808APCL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®, Zero Threshold™

FET Type

4 N-Channel, Matched Pair

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

80mA

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

20mV @ 10µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Through Hole

Package / Case

16-DIP (0.300", 7.62mm)

Supplier Device Package

16-PDIP

ALD210808PCL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®, Zero Threshold™

FET Type

4 N-Channel, Matched Pair

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

80mA

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

20mV @ 10µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Through Hole

Package / Case

16-DIP (0.300", 7.62mm)

Supplier Device Package

16-PDIP

ALD210808SCL

Advanced Linear Devices Inc.

Manufacturer

Advanced Linear Devices Inc.

Series

EPAD®, Zero Threshold™

FET Type

4 N-Channel, Matched Pair

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

10.6V

Current - Continuous Drain (Id) @ 25°C

80mA

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

20mV @ 10µA

Gate Charge (Qg) (Max) @ Vgs

-

Input Capacitance (Ciss) (Max) @ Vds

-

Power - Max

500mW

Operating Temperature

0°C ~ 70°C (TJ)

Mounting Type

Surface Mount

Package / Case

16-SOIC (0.154", 3.90mm Width)

Supplier Device Package

16-SOIC