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A2G35S200-01SR3 Datasheet

A2G35S200-01SR3 Cover
DatasheetA2G35S200-01SR3
File Size339.16 KB
Total Pages10
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts A2G35S200-01SR3
Description AIRFAST RF POWER GAN TRANSISTOR

A2G35S200-01SR3 - NXP

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URL Link

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

LDMOS

Frequency

3.4GHz ~ 3.6GHz

Gain

16.1dB

Voltage - Test

48V

Current Rating (Amps)

-

Noise Figure

-

Current - Test

291mA

Power - Output

180W

Voltage - Rated

125V

Package / Case

NI-400S-2S

Supplier Device Package

NI-400S-2S