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4N35(SHORT Datasheet

4N35(SHORT,F) Cover
Datasheet4N35(SHORT,F)
File Size333.09 KB
Total Pages6
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 1 part numbers
Associated Parts 4N35(SHORT,F)
Description OPTOISO 2.5KV TRANS W/BASE 6DIP

4N35(SHORT,F) - Toshiba Semiconductor and Storage

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4N35(SHORT,F) 4N35(SHORT,F) Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANS W/BASE 6DIP 813

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4N35(SHORT,F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Number of Channels

1

Voltage - Isolation

2500Vrms

Current Transfer Ratio (Min)

40% @ 10mA

Current Transfer Ratio (Max)

-

Turn On / Turn Off Time (Typ)

3µs, 3µs

Rise / Fall Time (Typ)

-

Input Type

DC

Output Type

Transistor with Base

Voltage - Output (Max)

30V

Current - Output / Channel

100mA

Voltage - Forward (Vf) (Typ)

1.15V

Current - DC Forward (If) (Max)

60mA

Vce Saturation (Max)

300mV

Operating Temperature

-55°C ~ 100°C

Mounting Type

Through Hole

Package / Case

6-DIP (0.300", 7.62mm)

Supplier Device Package

6-DIP