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2SK4065-DL-1EX Datasheet

2SK4065-DL-1EX Cover
Datasheet2SK4065-DL-1EX
File Size295.72 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts 2SK4065-DL-1EX, 2SK4065-DL-1E
Description MOSFET N-CH 75V TO263-2, MOSFET N-CH 75V 100A

2SK4065-DL-1EX - ON Semiconductor

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URL Link

2SK4065-DL-1EX

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

12200pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.65W (Ta), 90W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

2SK4065-DL-1E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

12200pF @ 20V

FET Feature

-

Power Dissipation (Max)

1.65W (Ta), 90W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB