Datasheet | 2SK3707-1E |
File Size | 255.9 KB |
Total Pages | 7 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | 2SK3707-1E, 2SK3707 |
Description | MOSFET N-CH 100V 20A, MOSFET N-CH 100V 20A TO-220ML |
2SK3707-1E - ON Semiconductor
The Products You May Be Interested In
2SK3707-1E | ON Semiconductor | MOSFET N-CH 100V 20A | 266 More on Order |
|
2SK3707 | ON Semiconductor | MOSFET N-CH 100V 20A TO-220ML | 366 More on Order |
URL Link
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 20A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 20V FET Feature - Power Dissipation (Max) 2W (Ta), 25W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F-3SG Package / Case TO-220-3 Full Pack |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 20A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 20V FET Feature - Power Dissipation (Max) 2W (Ta), 25W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220ML Package / Case TO-220-3 Full Pack |