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2SK3462(TE16L1 Datasheet

2SK3462(TE16L1,NQ) Cover
Datasheet2SK3462(TE16L1,NQ)
File Size180.04 KB
Total Pages6
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 1 part numbers
Associated Parts 2SK3462(TE16L1,NQ)
Description MOSFET N-CH 250V 3A PW-MOLD

2SK3462(TE16L1,NQ) - Toshiba Semiconductor and Storage

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2SK3462(TE16L1,NQ)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.7Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

267pF @ 10V

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PW-MOLD

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63