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2SK2845(TE16L1 Datasheet

2SK2845(TE16L1,Q) Cover
Datasheet2SK2845(TE16L1,Q)
File Size403.44 KB
Total Pages6
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 1 part numbers
Associated Parts 2SK2845(TE16L1,Q)
Description MOSFET N-CH 900V 1A DP

2SK2845(TE16L1,Q) - Toshiba Semiconductor and Storage

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2SK2845(TE16L1,Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

40W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DP

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63