Top

2SK2221-E Datasheet

2SK2221-E Cover
Datasheet2SK2221-E
File Size85.12 KB
Total Pages8
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts 2SK2221-E
Description MOSFET N-CH 200V 8A TO-3P

2SK2221-E - Renesas Electronics America

2SK2221-E Datasheet Page 1
2SK2221-E Datasheet Page 2
2SK2221-E Datasheet Page 3
2SK2221-E Datasheet Page 4
2SK2221-E Datasheet Page 5
2SK2221-E Datasheet Page 6
2SK2221-E Datasheet Page 7
2SK2221-E Datasheet Page 8

The Products You May Be Interested In

2SK2221-E 2SK2221-E Renesas Electronics America MOSFET N-CH 200V 8A TO-3P 630

More on Order

URL Link

2SK2221-E

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

600pF @ 10V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3