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2SK1119(F) Datasheet

2SK1119(F) Cover
Datasheet2SK1119(F)
File Size541.88 KB
Total Pages6
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 1 part numbers
Associated Parts 2SK1119(F)
Description MOSFET N-CH 1000V 4A TO-220AB

2SK1119(F) - Toshiba Semiconductor and Storage

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2SK1119(F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.8Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3