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2SJ668(TE16L1 Datasheet

2SJ668(TE16L1,NQ) Cover
Datasheet2SJ668(TE16L1,NQ)
File Size192.06 KB
Total Pages6
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 1 part numbers
Associated Parts 2SJ668(TE16L1,NQ)
Description MOSFET P-CHANNEL 60V 5A PW-MOLD

2SJ668(TE16L1,NQ) - Toshiba Semiconductor and Storage

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2SJ668(TE16L1,NQ)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIII

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

170mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 10V

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

150°C

Mounting Type

Surface Mount

Supplier Device Package

PW-MOLD

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63