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2SD1407A-Y(F) Datasheet

2SD1407A-Y(F) Cover
Datasheet2SD1407A-Y(F)
File Size131.01 KB
Total Pages4
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 1 part numbers
Associated Parts 2SD1407A-Y(F)
Description TRANS NPN 100V 5A TO220NIS

2SD1407A-Y(F) - Toshiba Semiconductor and Storage

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2SD1407A-Y(F) 2SD1407A-Y(F) Toshiba Semiconductor and Storage TRANS NPN 100V 5A TO220NIS 203

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2SD1407A-Y(F)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

100V

Vce Saturation (Max) @ Ib, Ic

2V @ 400mA, 4A

Current - Collector Cutoff (Max)

100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 1A, 5V

Power - Max

30W

Frequency - Transition

12MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS