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2SC2235-Y Datasheet

2SC2235-Y,USNHF(M Cover
Datasheet2SC2235-Y,USNHF(M
File Size128.05 KB
Total Pages4
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 22 part numbers
Associated Parts 2SC2235-Y,USNHF(M, 2SC2235-Y,T6USNF(M, 2SC2235-Y,T6KEHF(M, 2SC2235-Y,T6F(J, 2SC2235-Y,T6ASHF(J, 2SC2235-Y,F(J, 2SC2235-Y(T6OMI,FM, 2SC2235-Y(T6ND,AF, 2SC2235-Y(T6KMATFM, 2SC2235-Y(T6FJT,FM, 2SC2235-Y(T6FJT,AF, 2SC2235-Y(T6CN,A,F, 2SC2235-Y(T6CANOFM, 2SC2235-Y(MBSH1,FM, 2SC2235-Y(DNSO,AF), 2SC2235-Y(6MBH1,AF, 2SC2235-O,F(J, 2SC2235-O(T6FJT,FM, 2SC2235-O(T6FJT,AF, 2SC2235-O(T6ASN,FM, 2SC2235-O(FA1,F,M), 2SC2235(T6KMAT,F,M
Description TRANS NPN 800MA 120V TO226-3, TRANS NPN 800MA 120V TO226-3, TRANS NPN 800MA 120V TO226-3, TRANS NPN 800MA 120V TO226-3, TRANS NPN 800MA 120V TO226-3

2SC2235-Y,USNHF(M - Toshiba Semiconductor and Storage

2SC2235-Y Datasheet Page 1
2SC2235-Y Datasheet Page 2
2SC2235-Y Datasheet Page 3
2SC2235-Y Datasheet Page 4

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URL Link

2SC2235-Y,USNHF(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

900mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2235-Y,T6USNF(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

900mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2235-Y,T6KEHF(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

900mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2235-Y,T6F(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

900mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2235-Y,T6ASHF(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

900mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2235-Y,F(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

900mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2235-Y(T6OMI,FM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

900mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2235-Y(T6ND,AF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

900mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2235-Y(T6KMATFM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

900mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2235-Y(T6FJT,FM

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

900mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2235-Y(T6FJT,AF

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

900mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD

2SC2235-Y(T6CN,A,F

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

NPN

Current - Collector (Ic) (Max)

800mA

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

1V @ 50mA, 500mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

80 @ 100mA, 5V

Power - Max

900mW

Frequency - Transition

120MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 Long Body

Supplier Device Package

TO-92MOD