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2SA1931 Datasheet

2SA1931,SINFQ(J Cover
Datasheet2SA1931,SINFQ(J
File Size145.74 KB
Total Pages4
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 9 part numbers
Associated Parts 2SA1931,SINFQ(J, 2SA1931,Q(J, 2SA1931,NSEIKIQ(J, 2SA1931,NIKKIQ(J, 2SA1931,NETQ(M, 2SA1931,NETQ(J, 2SA1931,KEHINQ(M, 2SA1931,BOSCHQ(J, 2SA1931(NOMARK,A,Q
Description TRANS PNP 5A 50V TO220-3, TRANS PNP 5A 50V TO220-3, TRANS PNP 5A 50V TO220-3, TRANS PNP 5A 50V TO220-3, TRANS PNP 5A 50V TO220-3

2SA1931,SINFQ(J - Toshiba Semiconductor and Storage

2SA1931 Datasheet Page 1
2SA1931 Datasheet Page 2
2SA1931 Datasheet Page 3
2SA1931 Datasheet Page 4

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URL Link

2SA1931,SINFQ(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

400mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 1V

Power - Max

2W

Frequency - Transition

60MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SA1931,Q(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

400mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 1V

Power - Max

2W

Frequency - Transition

60MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SA1931,NSEIKIQ(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

400mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 1V

Power - Max

2W

Frequency - Transition

60MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SA1931,NIKKIQ(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

400mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 1V

Power - Max

2W

Frequency - Transition

60MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SA1931,NETQ(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

400mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 1V

Power - Max

2W

Frequency - Transition

60MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SA1931,NETQ(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

400mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 1V

Power - Max

2W

Frequency - Transition

60MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SA1931,KEHINQ(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

400mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 1V

Power - Max

2W

Frequency - Transition

60MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SA1931,BOSCHQ(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

400mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 1V

Power - Max

2W

Frequency - Transition

60MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SA1931(NOMARK,A,Q

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

5A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

400mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

100 @ 1A, 1V

Power - Max

2W

Frequency - Transition

60MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS