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2SA1869-Y Datasheet

2SA1869-Y,Q(J Cover
Datasheet2SA1869-Y,Q(J
File Size117.13 KB
Total Pages4
ManufacturerToshiba Semiconductor and Storage
Websitehttp://www.toshiba.com/taec/
Total PartsThis datasheet covers 4 part numbers
Associated Parts 2SA1869-Y,Q(J, 2SA1869-Y,MTSAQ(J, 2SA1869-Y(Q,M), 2SA1869-Y(JKT,Q,M)
Description TRANS PNP 3A 50V TO220-3, TRANS PNP 3A 50V TO220-3, TRANS PNP 3A 50V TO220-3, TRANS PNP 3A 50V TO220-3

2SA1869-Y,Q(J - Toshiba Semiconductor and Storage

2SA1869-Y Datasheet Page 1
2SA1869-Y Datasheet Page 2
2SA1869-Y Datasheet Page 3
2SA1869-Y Datasheet Page 4

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URL Link

2SA1869-Y,Q(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

600mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

10W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SA1869-Y,MTSAQ(J

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

600mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

10W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SA1869-Y(Q,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

600mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

10W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS

2SA1869-Y(JKT,Q,M)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

Transistor Type

PNP

Current - Collector (Ic) (Max)

3A

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

600mV @ 200mA, 2A

Current - Collector Cutoff (Max)

1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 500mA, 2V

Power - Max

10W

Frequency - Transition

100MHz

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Supplier Device Package

TO-220NIS