Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | 2N7002BKVL |
| File Size | 732.71 KB |
| Total Pages | 16 |
| Manufacturer | Nexperia |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | 2N7002BKVL, 2N7002BK,215 |
| Description | MOSFET N-CH 60V 350MA TO236AB, MOSFET N-CH 60V 350MA SOT23 |
2N7002BKVL - Nexperia
The Products You May Be Interested In
 |
2N7002BKVL | Nexperia | MOSFET N-CH 60V 350MA TO236AB | 31150 More on Order |
 |
2N7002BK,215 | Nexperia | MOSFET N-CH 60V 350MA SOT23 | 1230782 More on Order |
URL Link
|
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V FET Feature - Power Dissipation (Max) 370mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V FET Feature - Power Dissipation (Max) 370mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236AB Package / Case TO-236-3, SC-59, SOT-23-3 |