Top

2N7002-T1-E3 Datasheet

2N7002-T1-E3 Cover
Datasheet2N7002-T1-E3
File Size58.99 KB
Total Pages6
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts 2N7002-T1-E3, 2N7002-E3, 2N7002-T1-GE3
Description MOSFET N-CH 60V 115MA SOT23, MOSFET N-CH 60V 115MA SOT23, MOSFET N-CH 60V 115MA SOT23

2N7002-T1-E3 - Vishay Siliconix

2N7002-T1-E3 Datasheet Page 1
2N7002-T1-E3 Datasheet Page 2
2N7002-T1-E3 Datasheet Page 3
2N7002-T1-E3 Datasheet Page 4
2N7002-T1-E3 Datasheet Page 5
2N7002-T1-E3 Datasheet Page 6

The Products You May Be Interested In

2N7002-T1-E3 2N7002-T1-E3 Vishay Siliconix MOSFET N-CH 60V 115MA SOT23 376

More on Order

2N7002-E3 2N7002-E3 Vishay Siliconix MOSFET N-CH 60V 115MA SOT23 397

More on Order

2N7002-T1-GE3 2N7002-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 115MA SOT23 22989

More on Order

URL Link

2N7002-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

115mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

7.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

200mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236

Package / Case

TO-236-3, SC-59, SOT-23-3

2N7002-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

115mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

7.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

200mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236

Package / Case

TO-236-3, SC-59, SOT-23-3

2N7002-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

115mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

7.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

200mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236

Package / Case

TO-236-3, SC-59, SOT-23-3