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2N5308_D27Z Datasheet

2N5308_D27Z Cover
Datasheet2N5308_D27Z
File Size56.91 KB
Total Pages4
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 5 part numbers
Associated Parts 2N5308_D27Z, 2N5308_D75Z, 2N5308_D74Z, 2N5308_D26Z, 2N5308
Description TRANS NPN DARL 40V 1.2A TO-92, TRANS NPN DARL 40V 1.2A TO-92, TRANS NPN DARL 40V 1.2A TO-92, TRANS NPN DARL 40V 1.2A TO-92, TRANS NPN DARL 40V 1.2A TO-92

2N5308_D27Z - ON Semiconductor

2N5308_D27Z Datasheet Page 1
2N5308_D27Z Datasheet Page 2
2N5308_D27Z Datasheet Page 3
2N5308_D27Z Datasheet Page 4

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URL Link

2N5308_D27Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

40V

Vce Saturation (Max) @ Ib, Ic

1.4V @ 200µA, 200mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

7000 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5308_D75Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

40V

Vce Saturation (Max) @ Ib, Ic

1.4V @ 200µA, 200mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

7000 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5308_D74Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

40V

Vce Saturation (Max) @ Ib, Ic

1.4V @ 200µA, 200mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

7000 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5308_D26Z

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

40V

Vce Saturation (Max) @ Ib, Ic

1.4V @ 200µA, 200mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

7000 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

2N5308

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

1.2A

Voltage - Collector Emitter Breakdown (Max)

40V

Vce Saturation (Max) @ Ib, Ic

1.4V @ 200µA, 200mA

Current - Collector Cutoff (Max)

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce

7000 @ 2mA, 5V

Power - Max

625mW

Frequency - Transition

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3