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1N914TR Datasheet

1N914TR Cover
Datasheet1N914TR
File Size74.59 KB
Total Pages3
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts 1N914TR, 1N914TAP
Description DIODE GEN PURP 75V 200MA DO35, DIODE GEN PURP 100V 300MA DO35

1N914TR - Vishay Semiconductor Diodes Division

1N914TR Datasheet Page 1
1N914TR Datasheet Page 2
1N914TR Datasheet Page 3

The Products You May Be Interested In

1N914TR 1N914TR Vishay Semiconductor Diodes Division DIODE GEN PURP 75V 200MA DO35 30252

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1N914TAP 1N914TAP Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 300MA DO35 55529

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1N914TR

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

75V

Current - Average Rectified (Io)

200mA

Voltage - Forward (Vf) (Max) @ If

1V @ 10mA

Speed

Small Signal =< 200mA (Io), Any Speed

Reverse Recovery Time (trr)

4ns

Current - Reverse Leakage @ Vr

5µA @ 75V

Capacitance @ Vr, F

4pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

DO-204AH, DO-35, Axial

Supplier Device Package

DO-35

Operating Temperature - Junction

-55°C ~ 150°C

1N914TAP

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

Automotive, AEC-Q101

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

300mA

Voltage - Forward (Vf) (Max) @ If

1V @ 10mA

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

4ns

Current - Reverse Leakage @ Vr

5µA @ 75V

Capacitance @ Vr, F

4pF @ 0V, 1MHz

Mounting Type

Through Hole

Package / Case

DO-204AH, DO-35, Axial

Supplier Device Package

DO-35

Operating Temperature - Junction

-65°C ~ 175°C