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1N8031-GA Datasheet

1N8031-GA Cover
Datasheet1N8031-GA
File Size584.2 KB
Total Pages5
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts 1N8031-GA
Description DIODE SCHOTTKY 650V 1A TO276

1N8031-GA - GeneSiC Semiconductor

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1N8031-GA

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

650V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.5V @ 1A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

5µA @ 650V

Capacitance @ Vr, F

76pF @ 1V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-276AA

Supplier Device Package

TO-276

Operating Temperature - Junction

-55°C ~ 250°C