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10ETF12S Datasheet

10ETF12S Cover
Datasheet10ETF12S
File Size172.71 KB
Total Pages7
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 10 part numbers
Associated Parts 10ETF12S, 10ETF10STRR, 10ETF10STRL, 10ETF10S, 10ETF06STRL, 10ETF04STRL, 10ETF02STRL, 10ETF06S, 10ETF04S, 10ETF02S
Description DIODE GEN PURP 1.2KV 10A D2PAK, DIODE GEN PURP 1KV 10A D2PAK, DIODE GEN PURP 1KV 10A D2PAK, DIODE GEN PURP 1KV 10A D2PAK, DIODE GEN PURP 600V 10A D2PAK

10ETF12S - Vishay Semiconductor Diodes Division

10ETF12S Datasheet Page 1
10ETF12S Datasheet Page 2
10ETF12S Datasheet Page 3
10ETF12S Datasheet Page 4
10ETF12S Datasheet Page 5
10ETF12S Datasheet Page 6
10ETF12S Datasheet Page 7

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10ETF12S 10ETF12S Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 10A D2PAK 403

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10ETF10STRR 10ETF10STRR Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 10A D2PAK 364

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10ETF10STRL 10ETF10STRL Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 10A D2PAK 369

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10ETF10S 10ETF10S Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 10A D2PAK 349

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10ETF06STRL 10ETF06STRL Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 10A D2PAK 259

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10ETF04STRL 10ETF04STRL Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 10A D2PAK 223

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10ETF02STRL 10ETF02STRL Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 10A D2PAK 432

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10ETF06S 10ETF06S Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 10A D2PAK 552

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10ETF04S 10ETF04S Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 10A D2PAK 306

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10ETF02S 10ETF02S Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 10A D2PAK 553

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URL Link

10ETF12S

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

310ns

Current - Reverse Leakage @ Vr

100µA @ 1200V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB (D²PAK)

Operating Temperature - Junction

-40°C ~ 150°C

10ETF10STRR

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

310ns

Current - Reverse Leakage @ Vr

100µA @ 1000V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB (D²PAK)

Operating Temperature - Junction

-40°C ~ 150°C

10ETF10STRL

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

310ns

Current - Reverse Leakage @ Vr

100µA @ 1000V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB (D²PAK)

Operating Temperature - Junction

-40°C ~ 150°C

10ETF10S

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

310ns

Current - Reverse Leakage @ Vr

100µA @ 1000V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB (D²PAK)

Operating Temperature - Junction

-40°C ~ 150°C

10ETF06STRL

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.2V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

145ns

Current - Reverse Leakage @ Vr

100µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB (D²PAK)

Operating Temperature - Junction

-40°C ~ 150°C

10ETF04STRL

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

400V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.2V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

145ns

Current - Reverse Leakage @ Vr

100µA @ 400V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB (D²PAK)

Operating Temperature - Junction

-40°C ~ 150°C

10ETF02STRL

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.2V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

145ns

Current - Reverse Leakage @ Vr

100µA @ 200V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB (D²PAK)

Operating Temperature - Junction

-40°C ~ 150°C

10ETF06S

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.2V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

145ns

Current - Reverse Leakage @ Vr

100µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB (D²PAK)

Operating Temperature - Junction

-40°C ~ 150°C

10ETF04S

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

400V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.2V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

145ns

Current - Reverse Leakage @ Vr

100µA @ 400V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB (D²PAK)

Operating Temperature - Junction

-40°C ~ 150°C

10ETF02S

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.2V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

145ns

Current - Reverse Leakage @ Vr

100µA @ 200V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB (D²PAK)

Operating Temperature - Junction

-40°C ~ 150°C