Top

10ETF12 Datasheet

10ETF12 Cover
Datasheet10ETF12
File Size254.25 KB
Total Pages9
ManufacturerVishay Semiconductor Diodes Division
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts 10ETF12, 10ETF10
Description DIODE GEN PURP 1.2KV 10A TO220AC, DIODE GEN PURP 1KV 10A TO220AC

10ETF12 - Vishay Semiconductor Diodes Division

10ETF12 Datasheet Page 1
10ETF12 Datasheet Page 2
10ETF12 Datasheet Page 3
10ETF12 Datasheet Page 4
10ETF12 Datasheet Page 5
10ETF12 Datasheet Page 6
10ETF12 Datasheet Page 7
10ETF12 Datasheet Page 8
10ETF12 Datasheet Page 9

The Products You May Be Interested In

10ETF12 10ETF12 Vishay Semiconductor Diodes Division DIODE GEN PURP 1.2KV 10A TO220AC 583

More on Order

10ETF10 10ETF10 Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 10A TO220AC 470

More on Order

URL Link

10ETF12

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

310ns

Current - Reverse Leakage @ Vr

100µA @ 1200V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-40°C ~ 150°C

10ETF10

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1000V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

310ns

Current - Reverse Leakage @ Vr

100µA @ 1000V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220AC

Operating Temperature - Junction

-40°C ~ 150°C